@Article{VernasquiKawSarRodFer:2022:AcElRe,
               author = "Vernasqui, La{\'{\i}}s Gimenes and Kawata, Bianca Akemi and 
                         Sardinha, Andr{\'e} Ferreira and Rodrigo, M. A. and Ferreira, 
                         Neiden{\^e}i Gomes",
          affiliation = "{Instituto Nacional de Pesquisas Espaciais (INPE)} and {Instituto 
                         Nacional de Pesquisas Espaciais (INPE)} and {Instituto Nacional de 
                         Pesquisas Espaciais (INPE)} and {Electrochemical \& Environmental 
                         Engineering Lab} and {Instituto Nacional de Pesquisas Espaciais 
                         (INPE)}",
                title = "Achievement and electrochemical responsiveness of advanced 
                         boron-doped ultrananocrystalline diamond on highly ordered 
                         titanium dioxide nanotubes",
              journal = "Diamond and Related Materials",
                 year = "2022",
               volume = "121",
                pages = "e108793",
                month = "Jan.",
             keywords = "Boron-doped ultrananocrystalline diamond, Composite, CVD growth 
                         without seeding, Titanium dioxide nanotubes.",
             abstract = "Boron-doped ultrananocrystalline diamond grown on titanium dioxide 
                         nanotubes without seeding pre-treatment (B-UNCDWS/TDNT/Ti), as a 
                         porous composite, was successfully achieved. Innovative approaches 
                         concerning the highly ordered TDNT production as well as its 
                         singular diamond formation by hot filament chemical vapor 
                         deposition (CVD) were explored. The B-UNCD homogeneous cluster 
                         progress on the TDNT porous walls as a function of the growth 
                         times from 1 to 7 h led to remarkable composite morphologies, 
                         keeping the TDNT porosity, where the TiO2 TiC conversion dominated 
                         the renucleation process facilitating the nanometric scale 
                         control. Scanning electron microscopy images confirmed the 
                         continuous ultrananocrystalline formation as nanoclusters on the 
                         TDNT walls with their size evolution as a function of growth time 
                         also showing an increase in the CVD diamond ballas clusters. Raman 
                         spectra and X-Ray patterns exhibited the diamond characteristics 
                         with defined peaks and TiC formation, as expected. The 
                         ID(220)/(111) and ID(311)/(111) ratio intensities pointed out the 
                         films governed by (220) diamond phase, due to their high 
                         renucleation process. Besides, the intensity ratios for both TiC 
                         (111) and TiC (200) phases with D(111) peak showed a carbon atoms 
                         competition between surface and bulk diffusion on the TiC layer. 
                         The electrode reversibility evaluated from cyclic voltammetry 
                         curves followed the quasi-reversible criteria for all samples, 
                         confirming their promising performance. Mott-Shottky plots are in 
                         good agreement with Raman spectra for boron-doped films from 1018 
                         to 1019 B.cm\−3 where the highest doped diamond was 
                         obtained for the thickest films of 5 and 7 h.",
                  doi = "10.1016/j.diamond.2021.108793",
                  url = "http://dx.doi.org/10.1016/j.diamond.2021.108793",
                 issn = "0925-9635",
             language = "en",
           targetfile = "1-s2.0-S0925963521005562-main.pdf",
        urlaccessdate = "30 abr. 2024"
}